panel Session

Over the past 25 years, silicon RF technologies have evolved from niche to a key enabling platform—making affordable RF electronics viable even at sub-millimetre wave frequencies, while supporting unprecedented circuit complexity within a single die. At the same time, silicon RF technologies—particularly SiGe—have demonstrated exceptional radiation hardness, outstanding performance at cryogenic temperatures, and the ability to seamlessly integrate multifunctional RF photonics and MEMS modules. They have also achieved impressive Ft/Fmax values approaching 1 THz, along with highly competitive noise figures. With SiGe RF amplifiers now delivering power levels up to 1 W, silicon is entering performance domains that were once the stronghold of GaAs. In short, silicon technologies are fundamentally reshaping the way RF systems are designed and implemented today.

The objective of this panel session is to explore these and many other topics related to the use of silicon RF technologies in space applications, fostering an engaging exchange between panellists and the audience. Five distinguished speakers will share their perspectives, addressing both industrialisation challenges and cutting-edge R&D developments in the field.

The session will begin with 5–10 minute pitch talks from each panellist, followed by an open dialogue with the audience.

Come and join this panel session, we are looking forward to a dynamic and insightful discussion with you!